Surface morphology of TiSi₂ on siliconHYEONGTAG JEON; NEMANICH, R. J.Thin solid films. 1990, Vol 184, pp 357-363, issn 0040-6090, 7 p.Conference Paper

Surface electronic states of low-temperature H-plasma-exposed Ge(100)JAEWON CHO; NEMANICH, R. J.Physical review. B, Condensed matter. 1992, Vol 46, Num 19, pp 12421-12426, issn 0163-1829Article

Effect of surface hydrogen on metal-diamond interface propertiesTACHIBANA, T; GLASS, J. T; NEMANICH, R. J et al.Journal of applied physics. 1993, Vol 73, Num 2, pp 835-842, issn 0021-8979Article

Surface cleaning, electronic states and electron affinity of diamond(100), (111) and (110) surfacesBAUMANN, P. K; NEMANICH, R. J.Surface science. 1998, Vol 409, Num 2, pp 320-335, issn 0039-6028Article

Argon and hydrogen plasma interactions on diamond (111) surfaces : electronic states and structureVAN DER WEIDE, J; NEMANICH, R. J.Applied physics letters. 1993, Vol 62, Num 16, pp 1878-1880, issn 0003-6951Article

Raman scattering characterization of titanium silicide formationNEMANICH, R. J; FIORDALICE, R. W; HYEONGTAG JEON et al.IEEE journal of quantum electronics. 1989, Vol 25, Num 5, pp 997-1002, issn 0018-9197, 6 p., 1Article

Hydrogen desorption kinetics and band bending for 6H-SiC(0001) surfacesKING, S. W; DAVIS, R. F; NEMANICH, R. J et al.Surface science. 2009, Vol 603, Num 20, pp 3104-3118, issn 0039-6028, 15 p.Article

Characterization of cobalt-diamond (100) interfaces : electron affinity and Schottky barrierBAUMANN, P. K; NEMANICH, R. J.Applied surface science. 1996, Vol 104-05, pp 267-273, issn 0169-4332Conference Paper

Kinetics of Ga and In desorption from (7×7) Si(111) and (3 × 3) 6H-SiC(0001) surfacesKING, S. W; DAVIS, R. F; NEMANICH, R. J et al.Surface science. 2008, Vol 602, Num 2, pp 405-415, issn 0039-6028, 11 p.Article

Imaging electron emission from diamond film surfaces : N-doped diamond vs. nanostructured diamondKÖCK, F. A. M; GARGUILO, J. M; NEMANICH, R. J et al.Diamond and related materials. 2001, Vol 10, Num 9-10, pp 1714-1718, issn 0925-9635Conference Paper

Wet chemical processing of (0001)_Si 6H-SiC : Hydrophobic and hydrophilic surfacesKING, S. W; NEMANICH, R. J; DAVIS, R. F et al.Journal of the Electrochemical Society. 1999, Vol 146, Num 5, pp 1910-1917, issn 0013-4651Article

The Schottky barrier of Co on strained and unstrained Si_xGe_1-x alloysKU, J. H; NEMANICH, R. J.Applied surface science. 1996, Vol 104-05, pp 262-266, issn 0169-4332Conference Paper

Analysis of the composite structures in diamond thin films by Raman spectroscopySHRODER, R. E; NEMANICH, R. J; GLASS, J. T et al.Physical review. B, Condensed matter. 1990, Vol 41, Num 6, pp 3738-3745, issn 0163-1829, 8 p.Article

Energy dependence of the carrier mobility-lifetime product in hydrogenated amorphous siliconJACKSON, W. B; NEMANICH, R. J; AMER, N. M et al.Physical review. B, Condensed matter. 1983, Vol 27, Num 8, pp 4861-4871, issn 0163-1829Article

The IBEX-Lo SensorFUSELIER, S. A; BOCHSLER, P; GOOGINS, J et al.Space science reviews. 2009, Vol 146, Num 1-4, pp 117-147, issn 0038-6308, 31 p.Article

Using negative electron affinity diamond emitters to mitigate space charge in vacuum thermionic energy conversion devicesSMITH, J. R; BILBRO, G. L; NEMANICH, R. J et al.Diamond and related materials. 2006, Vol 15, Num 11-12, pp 2082-2085, issn 0925-9635, 4 p.Conference Paper

Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectraLUCOVSKY, G; HONG, J. G; FULTON, C. C et al.Microelectronics and reliability. 2005, Vol 45, Num 5-6, pp 827-830, issn 0026-2714, 4 p.Conference Paper

Field enhanced thermionic electron emission from sulfur doped nanocrystalline diamond filmsKÖCK, F. A. M; GARGUILO, J. M; NEMANICH, R. J et al.Diamond and related materials. 2005, Vol 14, Num 3-7, pp 704-708, issn 0925-9635, 5 p.Conference Paper

Direct correlation of surface morphology with electron emission sites for intrinsic nanocrystalline diamond filmsKÖCK, Ea. M; GARGUILO, J. M; NEMANICH, R. J et al.Diamond and related materials. 2004, Vol 13, Num 4-8, pp 1022-1025, issn 0925-9635, 4 p.Conference Paper

Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO₂ layers sandwiched between thicker SiO₂ layersHINKLE, C. L; FULTON, C; NEMANICH, R. J et al.Applied surface science. 2004, Vol 234, Num 1-4, pp 240-245, issn 0169-4332, 6 p.Conference Paper

Spectroscopic studies of metal high-k dielectrics: transition metal oxides and silicates, and complex rare earth/transition metal oxidesLUCOVSKY, G; HONG, J. G; FULTON, C. C et al.Physica status solidi. B. Basic research. 2004, Vol 241, Num 10, pp 2221-2235, issn 0370-1972, 15 p.Conference Paper

Electron emission properties of crystalline diamond and III-nitride surfacesNEMANICH, R. J; BAUMANN, P. K; BENJAMIN, M. C et al.Applied surface science. 1998, Vol 130-32, pp 694-703, issn 0169-4332Conference Paper

Surface characterizationMCGUIRE, G. E; WEISS, P. S; KUSHMERICK, J. G et al.Analytical chemistry (Washington, DC). 1997, Vol 69, Num 12, pp 231R-250R, issn 0003-2700Article

Cleaning of GaN surfacesSMITH, L. L; KING, S. W; NEMANICH, R. J et al.Journal of electronic materials. 1996, Vol 25, Num 5, pp 805-810, issn 0361-5235Article

Surface characterizationFULGHUM, J. E; MCGUIRE, G. E; MUSSELMAN, I. H et al.Analytical chemistry (Washington, DC). 1989, Vol 62, Num 12, pp 243R-269R, issn 0003-2700Article